5016.T
JX Advanced Metals Corporation
プライム · 非鉄金属 · 鉄鋼・非鉄 · JP
JPY 2,824.00
−3.49%Nov 4, 2026, 01:37 UTC
JX Advanced Metals shares fell for a third consecutive session in Tokyo trading.
Source:Oct 31, 2026, 23:15 UTC
Tokyo Stock Exchange Prime Market data showed increases in margin short positions for the week ended October 23, led by Infroneer Holdings with a 5.535 million-share increase, followed by CKD with 1.153 million and Sony Financial Group with 813,000.
Source:Oct 21, 2026, 00:03 UTC
At 9:03:34 on October 21, 2026, 61 Japanese stocks had special buy indications and seven had special sell indications; Kioxia led buy orders, while Wintest led sell orders.
Source:Oct 15, 2026, 00:03 UTC
Japanese equities showed broad special-quote selling, with 182 stocks under special sell quotes versus 23 under special buy quotes; Kioxia led sell orders at ¥40.2 billion against ¥24.9 billion in buy orders, while Tobu Juhan led buy orders at ¥7.72 billion against no sell orders.
Source:Oct 10, 2026, 23:00 UTC
Tokyo Stock Exchange Prime-listed shares with the largest declines in margin-buying balances from September 25 to October 2 included Fujikura (down 3.36 million shares), Furukawa Electric (down 2.298 million), and Tokyo Electric Power Company Holdings (down 2.082 million).
Source:Sep 30, 2026, 13:05 UTC
Tronox and JX Advanced Metals plan to invest $32 million in rare earth development projects across Australia and the United States, targeting up to 10,000 tons of annual oxide output.
Source:Sep 29, 2026, 07:06 UTC
JX Metals agreed with Tronox Holdings to start a joint study on entering the rare earth refining business, evaluating feasibility of separating, leaching and refining rare earth minerals in Australia and the United States through 2027.
Sep 24, 2026, 01:56 UTC
CTBC Taiwan-Japan-Korea PCB ETF (009828) rose 9.8% over five days and returned to its NT$10 issue price, hitting a high of NT$10.06.
Source:Jun 19, 2026, 10:18 UTC
Japan's JX Advanced Metals unveiled plans to invest up to 120 billion yen over four years to boost InP substrate capacity by seven to ten times.
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